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用数值分析的方法讨论了中性陷阱对超薄场效应晶体管 (MOSFET)隧穿电流的影响 .中性陷阱引起势垒的变化在二氧化硅的导带中形成一个方形的势阱 .对于不同的势垒变化 ,计算了电子隧穿氧化层厚度为 4nm的超薄金属氧化物半导体结构的电流 .结果表明 ,中性陷阱对隧穿电流的影响不能被忽略 ,中性陷阱的存在使隧穿电流增加 ,并且通过这个简单的模型能够理解应变诱导漏电流的产生机制 .
The effects of neutral traps on the tunneling current of ultra-thin field-effect transistors (MOSFETs) are discussed numerically, and the change in potential barrier caused by the neutral traps forms a square potential well in the conduction band of the silicon dioxide. The results show that the influence of the neutral trap on the tunneling current can not be ignored and the presence of the neutral trap makes the tunneling Current increases, and through this simple model can understand the mechanism of strain induced leakage current.