论文部分内容阅读
使用nextnano3模拟软件计算Si/Si1-xGex/Si量子阱的能带结构,对Si/SiGe量子级联激光器有源区的能带结构进行设计,结果表明使用Ge组分为0·27~0·3,量子阱宽度为3nm的SiGe合金与垒宽为3nm的Si层构成对称应变级联异质结构,有利于优化THzSi/SiGe量子级联激光器结构.
The energy band structure of the Si / Si1-xGex / Si quantum well was calculated using the nextnano3 simulation software to design the energy band structure of the active region of the Si / SiGe quantum cascade laser. The results show that the Ge composition is 0.27 ~ 0. 3, the SiGe quantum well with a width of 3nm and the Si layer with a base width of 3nm form a symmetrical strain cascade heterostructure, which is favorable for optimizing the structure of the THzSi / SiGe quantum cascade laser.