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DHL是用连续液相外延法在重掺杂n-_GaAs衬底上生长双异质结构外延层。在600℃下用ZnAs_2作源低温Zn扩散45分钟。用钨丝网掩蔽后,在150千电子伏的能量下,以1×101~(15)质子/厘米~2的剂量进行轰击。P面蒸发Cr-Au后再镀上～10μm的Au。衬底减薄后,在N面蒸发Au—Ge-Ni、450℃合金化一分半钟后再镀上～2μm的Au。管芯解理后,用In焊料倒装在镀Au的管壳铜柱上,DHL的条宽为12μm,腔长为300μm。各外延层组分和欧姆接触等细节列于表1。为了比较质子轰击深度对DHL特性的影响,作者把同一外延片分成两半,编号分别为801和802。801不减薄,802化学减薄掉0.8
DHL is the growth of double heterostructure epitaxial layers on heavily doped n-_GaAs substrates by continuous liquid-phase epitaxy. Diffusion of ZnAs2 at source low temperature for Zn for 45 minutes at 600 ° C. After masking with a tungsten mesh, bombardment was carried out at a dose of 1 × 10 15 protons / cm 2 at an energy of 150 keV. P-face evaporated Cr-Au plated ~ 10μm of Au. After the substrate is thinned, Au-Ge-Ni is evaporated on the N surface and alloyed at 450 ° C for one and a half minutes before plating with ~2 μm Au. After the die was cleaved, the solder was flip-flipped with In solder on a copper-plated copper-clad copper pillar. The width of the DHL was 12 μm and the cavity length was 300 μm. The details of each epitaxial layer composition and ohmic contact are shown in Table 1. To compare the effect of proton bombardment depth on DHL properties, the authors split the same epitaxial wafer into two halves numbered 801 and 802.801 without thinning, 802 chemically thinned by 0.8