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用光伏谱方法研究了ＩｎＧａＡｓ／ＧａＡｓ应变量子阱结构中各子能级间的光跃迁，并与理论计算的结果进行了比较．分析了光伏谱峰能量随阱宽与温度的变化，并讨论了光伏谱峰强度的温度关系．
The photo-spectra were used to study the optical transitions between the various sub-energy levels in the InGaAs / GaAs strained quantum well structure. The results were compared with the theoretical results. The variation of the peak energy of the photovoltaic spectrum with the well width and temperature was analyzed and the temperature dependence of the peak intensity of the photovoltaic spectrum was discussed.