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研究了非故意掺杂的n型cBN晶体的电学性质.所研究的cBN晶体是由六角氮化硼在高温高压下以镁粉为催化剂转化而来.在室温下,测量了cBN晶体的伏安特性,为非线性伏安特性.当电场强度在105～1.5×105V/cm范围内时,cBN晶体发生电击穿.同时,cBN晶体发出波长为380~400nm的蓝紫光.继续测量cBN晶体伏安特性,发现cBN晶体出现电流控制型微分负阻.这些实验现象是可以重复的.
The electrical properties of unintentionally doped n-type cBN crystals were investigated.The cBN crystals studied were converted from hexagonal boron nitride with magnesium powder as catalyst at high temperature and high pressure.The voltammetry of cBN crystals was measured at room temperature Characteristics of non-linear voltammetric characteristics.When the electric field intensity in the range of 105 ~ 1.5 × 105V / cm, cBN crystal electrical breakdown occurs.At the same time, the cBN crystal emits a wavelength of 380 ~ 400nm blue-violet light.Continuous measurement of cBN crystal volt An characteristics and found that cBN crystal current control differential negative resistance appears.These experimental phenomena can be repeated.