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采用溶胶 凝胶法在Pt Ti SiO2 Si衬底上制备了不同La掺杂浓度PLZT(x 4 0 6 0 )薄膜 .x射线衍射分析表明制备的PLZT(x 4 0 6 0 )薄膜是具有单一钙钛矿结构的多晶薄膜 .通过红外椭圆偏振光谱仪测量了波长为 2 5— 12 6 μm范围内PLZT薄膜的椭偏光谱 ,采用经典色散模型拟合获得PLZT薄膜的红外光学常数 ,同时也拟合获得PLZT薄膜的厚度 .随着La掺杂浓度的增大 ,折射率逐渐减小 .而消光系数除PLZT(4 4 0 6 0 )薄膜外 ,呈现逐渐增大的趋势 .分析表明这些差异主要与PLZT薄膜的结晶性 ,如晶粒尺寸 ,以及颗粒边界、形貌、电子能带结构有关 .通过计算得到PLZT薄膜的吸收系数大于PZT薄膜的吸收系数 .随着La掺杂浓度的增大 ,静态电荷值逐渐减小 .这说明在PLZT中 ,电荷的转移是不完全的 ,它属于离子 共价混合的化合物 .
PLZT (x 4 0 6 0) films with different La doping concentrations were prepared on Pt Ti SiO 2 Si substrate by sol-gel method.X-ray diffraction analysis showed that the prepared PLZT (x 4 0 6 0) Polycrystalline thin film with titanium structure.The elliptical polarization spectra of PLZT thin films with the wavelength of 2 5-12 6 μm were measured by infrared ellipsometer and the infrared optical constants of PLZT thin films were fitted by classical dispersion model fitting The thickness of PLZT film was obtained.The refractive index decreased with the increase of La doping concentration.The extinction coefficient showed a trend of increasing except PLZT film.The results show that The crystallinity of PLZT thin films, such as grain size, particle boundary, morphology and electronic band structure, were calculated.The absorption coefficient of PLZT thin film was larger than that of PZT thin film.With the increase of La doping concentration, the static state The charge decreases gradually, indicating that the charge transfer in PLZT is incomplete and belongs to the ion-covalently mixed compound.