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Amorphous La_(0.7)Zn_(0.3)MnO_3(LZMO) films were deposited on p+-Si substrates by sol-gel method at low temperature of 450 ℃.The Ag/LZMO/p~+-Si device exhibits invertible bipolar resistive switching and the R_(HRS)/R_(LRS) was about 10~4-10~6 at room temperature which can be kept over 10~3 switching cycles.Better endurance characteristics were observed in the Ag/LZMO/p+-Si device,the VSet and the VReset almost remained after 10~3 endurance switching cycles.According to electrical analyses,the conductor mechanism was in low resistor state(LRS) governed by the filament conductor and in the high state(HRS) dominated by the trapscontrolled space-charge-limited current(SCLC) conductor.
Amorphous La_ (0.7) Zn_ (0.3) MnO_3 (LZMO) films were deposited on p + -Si substrates by sol-gel method at low temperature of 450 ℃ .The Ag / LZMO / p ~ + -Si device exhibits invertible bipolar resistive switching and the R HRS / R LRS was about 10 ~ 4-10 ~ 6 at room temperature which could be kept over 10 ~ 3 switching cycles. Butter endurance characteristics were observed in the Ag / LZMO / p + -Si device, the VSet and the VReset almost remained after 10 ~ 3 endurance switching cycles. According to electrical analyzes, the conductor mechanism was in low resistance state (LRS) governed by the trapscontrolled space-charge -limited current (SCLC) conductor.