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GaAs PHEMT低噪声放大器高温电老炼试验过程中存在电流先减小后部分恢复的现象。基于内部气氛检测结果和电路结构分析,认为低噪声放大器电流变化是氢气氛下其内部GaAs场效应晶体管(FET)性能发生退化所导致。因低噪声放大器芯片电路结构特点不能对内部FET直接进行参数测试,为进一步研究GaAs FET的氢效应作用机理,对GaAs FET结构单元开展高温电老炼试验,试验过程中GaAs FET电流变化趋势与低噪声放大器相同。分析了GaAs FET结构单元试验过程中饱和漏电流、夹断电压变化趋势,认为导致GaAs FET电参数先减小是由于沟道二维电子气(2DEG)浓度减小和栅金属与GaAs界面状态改变两种机理共同作用,电参数部分恢复主要是栅金属与GaAs界面状态改变起作用。
GaAs PHEMT low-noise amplifier in the high-temperature electrical aging test exists in the first part of the current to reduce the phenomenon of recovery. Based on the results of the internal atmosphere test and the circuit structure analysis, it is considered that the current change of the low-noise amplifier is caused by the degradation of the performance of the internal GaAs field-effect transistor (FET) in the hydrogen atmosphere. In order to further study the mechanism of hydrogen effect in GaAs FETs, high-temperature electrical aging test of GaAs FETs was carried out. The change trend of GaAs FET current in the process of testing was low The same noise amplifier. The trend of the saturated leakage current and pinch-off voltage during the test of GaAs FET structure unit is analyzed. It is considered that the decrease of the electrical parameters of GaAs FET first is due to the decrease of 2DEG concentration in the channel and the change of interface state between gate metal and GaAs The two mechanisms work together. The recovery of electrical parameters is mainly due to the change of gate metal and GaAs interface state.