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本文论述4GHz低噪声GaAs MESFET在缩短栅长L,减小寄生电阻(R_s+R_g)的同时需减小等效噪声电阻R_n,以获得较理想的增益和噪声性能.本文还叙述了器件主要参数的控制,并指出在亚微米栅长时栅边缘效应对器件噪声系数的影响.
This paper discusses the 4GHz low-noise GaAs MESFET to reduce the gate length L and reduce the parasitic resistance (R_s + R_g), while reducing the equivalent noise resistance R_n, in order to obtain better gain and noise performance.This paper also describes the main parameters of the device The influence of the gate-edge effect on the noise figure of the device at sub-micron gate length is also pointed out.