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用亚阈技术分析研究了干氧栅氧化期间通入ＨＣｌ所制作的ＰＭＯＳＦＥＴ的６０Ｃｏ辐照响应。结果表明，栅介质中掺入少量ＨＣｌ能抑制辐射感生阈电压漂移和界面态增长；固定ＨＣｌ流量为１５ｍｌ／ｍｉｎ时的最优通入时间范围为１０－１５０ｓ，过量的ＨＣｌ掺入，其抑制辐射损伤的能力减弱或消失。用ＨＣｌ在栅介质中的作用是正负效应的综合，解释了实验结果。
The sub-threshold technique was used to analyze and study the 60Co radiation response of PMOSFET made by introducing HCl into dry oxide gate oxide. The results show that the incorporation of a small amount of HCl into the gate dielectric can suppress the radiation-induced threshold voltage shift and interface state growth. When the fixed HCl flow rate is 15 ml / min, the optimal access time ranges from 10 to 150 s. The ability to suppress radiation damage diminishes or disappears. The use of HCl in the gate dielectric is a combination of positive and negative effects, explaining the experimental results.