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It was demonstrated that heavy ions can induce large current-voltage(Ⅰ-Ⅴ) characteristics shift in commercial trench power MOSFETs,named single event microdose effect(SE-microdose effect).A model is presented to describe this effect.This model calculates the charge deposition by a single heavy ion hitting oxide and the subsequent charge transport under an electric field.Holes deposited at the SiO_2/Si interface by a Xe ion are calculated by using this model.The calculated results were then used in Sentaurus TCAD software to simulate a trench power MOSFET’s Ⅰ—Ⅴ curve shift after a Xe ion has hit it.The simulation results are consistent with the related experiment’s data.In the end,several factors which affect the SE-microdose effect in trench power MOSFETs are investigated by using this model.
It was demonstrated that heavy ions can induce large current-voltage (Ⅰ-Ⅴ) characteristics shift in commercial trench power MOSFETs, named single event microdose effect (SE-microdose effect). A model is presented to describe this effect. This model calculates the charge deposition by a single heavy ion hitting oxide and the subsequent charge transport under an electric field. Holes deposited at the SiO 2 / Si interface by a Xe ion are calculated by using this model. The calculated results were then used in Sentaurus TCAD software to simulate a trench power MOSFET’s Ⅰ-Ⅴ curve shift after a Xe ion has hit it. the simulation results are consistent with the related experiment’s data. In the end, several factors which affect the SE-microdose effect in trench power MOSFETs are investigated by using this model.