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通过分子束外延生长不同组分的Ge_xSi_(1-x)标样,测量其俄歇谱(dN/dE～E),得到了在指定的实验条件下Ge(LMM)和Si(KLL)幅度之比与Ge组分x的关系,与只用纯Ge和纯Si原子灵敏度因子之比计算结果差别很小.证明俄歇电子谱是组分x原位测量的有效手段,相对误差在10%以内.讨论了Ge的偏析现象,在x>0的情况下Ge偏析不致于影响上述测量方法的准确性.
The Auger spectra (dN / dE ~ E) were measured by molecular beam epitaxy of Ge_xSi_ (1-x) with different compositions. The amplitudes of Ge (LMM) and Si Compared with the Ge component x, the difference between the calculated results and those of pure Si and pure Si atoms is very small, which shows that Auger electron spectroscopy is an effective method for the in situ measurement of component x with the relative error less than 10% The segregation phenomenon of Ge was discussed. Ge segregation did not affect the accuracy of the above method when x> 0.