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用磁控反应溅射 (RS)法制备出 Gex C1 - x薄膜 ,它的折射率可在 1 .6～ 4.0之间变化 .设计出不同厚度的 Gex C1 - x均匀增透膜系和非均匀增透膜系 ,并在 Zn S基片上制备出 Gex C1 - x均匀增透膜系 .设计结果表明 ,均匀膜系能实现某一波段范围内增透 ,非均匀膜系能实现宽波段增透 ;当厚度增加时 ,均匀增透膜系的透过率曲线变得急剧振荡 ,非均匀膜系的透过率曲线变得更为平滑 ,且向长波段扩展 .实验结果表明 ,在 8～ 1 1 .5 μm波段 ,Zn S基片双面镀 Gex C1 - x均匀增透膜系后平均透过率为 90 .4% ,比未镀膜的 Zn S基片 (平均透过率为 73.9% )净增加 1 6 .5 % .
Gex C1 - x films were prepared by magnetron reactive sputtering (RS), and the refractive index of Gex C1 - x films varied from 1.6 to 4.0. Ge1C1 - x uniform AR coatings with different thickness were designed and inhomogeneous Antireflection coating and Gex C1 - x uniform antireflection coating were prepared on ZnS substrate.The design results show that the uniform coating can achieve antireflective coating in a certain wavelength range, and the nonuniform coating can achieve broadband antireflection When the thickness increases, the transmittance curve of the AR coating becomes sharply oscillating, and the transmittance curve of the non-uniform film becomes smoother and extends to the longer wavelength band. In the 1 .5 μm band, the average transmittance of ZnS substrates coated with Gex C1 - x uniform AR coatings was 90.4%, which was higher than that of uncoated ZnS substrates with an average transmittance of 73.9% Net increase of 16.5%.