(111) preferentially oriented Ag2O film deposited by direct current reactive magnetron sputtering is annealed by rapid thermal processing at different annealing
We present general equations for metal-substrate single-layer microwave absorbing materials. The optimum electromagnetic parameters and matching thicknesses for
The complex refractive indices and the dielectric function of GaN for frequencies ranging from 0.25 to 1.22THz are obtained using THz time-domain spectroscopy.
We measured the total reaction cross sections of 12N in Si at 36.2 MeV/u using Radioactive Ion Beam Line in Lanzhou (RIBLL) with a new method. The reaction targ
A ferroelectric bilayer model considering depolarization field and interfacial coupling is proposed and the expression of the depolarization field is derived. T
An ultra-low-dielectric-constant (ultra low-k, or ULK) porous SiOCH film is prepared using a single ring-type siloxane precursor of the 2,4,6,8-tetravinyl-2,4,6
The pseudorapidity distributions of charged particles produced in Cu-Cu collisions over an energy range from 22.4 GeV to 200 GeV are investigated by using a mul