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使用直流等离子体化学气相沉积(DC-PCVD)装置,控制合适的工艺参数可对置于其阴阳极上的试样沉积出以Si_3N_4为主要成分的薄膜,本文提出了在阴极以及阳极上都能使试样表面得到这种薄膜的机制模型。正电荷的积累和自由电子的质扩散对于阴极试样表面薄膜的形成起着重要的作用。阳极试样表面薄膜的形成则与电子的积累和正离子的扩散及重力对粒子的作用有关。
Using DC plasma CVD (DC-PCVD) device, suitable process parameters can be placed on the cathode and anode samples deposited Si_3N_4 as the main component of the film, the paper proposed in the cathode and the anode can Make the surface of the sample get the mechanism model of this kind of film. The accumulation of positive charges and the diffusion of free electrons play an important role in the formation of thin film on the surface of cathode samples. The formation of thin film on the surface of the anode sample is related to the accumulation of electrons and the diffusion of positive ions and the effect of gravity on the particles.