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采用射频磁控溅射的工艺,在玻璃衬底上制备得到了铜铟镓硒(CIGS)薄膜。讨论了衬底温度、溅射气压、退火与否对CIGS薄膜与衬底结合力、显微形貌、晶化程度及电阻率的影响。通过能谱(EDS)测试证明了溅射的CIGS薄膜Ga组分比符合高效吸收层的要求,通过X射线衍射(XRD)与扫描电子显微镜(SEM)测试,证明了衬底加热溅射、溅射后450℃空气退火可以有效提高CIGS薄膜与衬底的结合并提高晶化程度。通过四探针法电阻率测试证明了低气压条件下溅射、溅射后退火可以有效降低CIGS的电阻率,通过透射光谱分析证明了CIGS薄膜对可见光有高吸收效率,适合作为太阳电池的高效吸收层。
By using RF magnetron sputtering process, a CIGS thin film was prepared on a glass substrate. The effects of substrate temperature, sputtering pressure and annealing on the bonding force, microstructure, degree of crystallinity and resistivity of CIGS films were discussed. The X-ray diffraction (XRD) and scanning electron microscopy (SEM) tests proved that the Ga content of the sputtered CIGS thin film is higher than that of the highly-absorptive layer by energy dispersive spectroscopy (EDS) Air annealing at 450 ℃ after irradiation can effectively improve the bonding between the CIGS thin film and the substrate and improve the crystallization degree. The four-probe resistivity test shows that sputtering at low pressure can effectively reduce the electrical resistivity of CIGS. Transmission electron spectroscopy (CSP) shows that CIGS film has high absorption efficiency for visible light and is suitable for high efficiency of solar cells Absorption layer.