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采用双靶共溅射Cu-Sb合金预制层后硫化法制备铜锑硫(Cu Sb S2)薄膜,研究溅射功率对合金成分的影响,并采用X线能量色散谱(EDS)、扫描电镜(SEM)、X线衍射(XRD)和紫外-可见-近红外分光光度计(UV-VIS-NIR)等对硫化后薄膜进行表征,同时制备Cu Sb S2太阳能电池器件并对其输出特性进行表征和分析。研究结果表明:三元Cu Sb S2相由预制层中金属被硫化生成的二元硫化物Cu S和Sb2S3相互反应形成。在400℃下硫化退火可制得结晶良好、表面致密的Cu Sb S2薄膜,其带隙宽度为1.46 e V,并在可见光区具有大于5×104 cm-1的光吸收系数。制作的glass/Mo/Cu Sb S2/Cd S/i-Zn O/Al-doped Zn O/Ag薄膜太阳能电池器件在太阳总辐照度为100 m W/cm2下测试,获得的开路电压和短路电流密度分别达150 m V和1.29 m A/cm2。
The Cu Sb S2 thin films were prepared by the co-sputtering Cu-Sb alloy pre-layer and the influence of sputtering power on the composition of the alloy was studied. X-ray energy dispersive spectroscopy (EDS), scanning electron microscopy SEM, X-ray diffraction (XRD) and UV-VIS-NIR spectroscopy were used to characterize the films after vulcanization. At the same time, Cu Sb S2 solar cells were fabricated and their output characteristics were characterized and analyzed. analysis. The results show that the ternary Cu Sb S2 phase is formed by the mutual reaction of the binary sulfides Cu S and Sb2S3 formed by the sulfidation of the metal in the preform. After annealing at 400 ℃, a well-crystallized and surface-dense Cu Sb S2 thin film with a bandgap width of 1.46 eV and an optical absorption coefficient of more than 5 × 104 cm-1 in the visible region was obtained. The fabricated glass / Mo / Cu Sb S2 / Cd S / i-Zn O / Al-doped Zn O / Ag thin film solar cell devices were tested at a total solar irradiance of 100 mW / cm2 and the resulting open circuit voltage and short circuit The current densities are 150 mV and 1.29 mA / cm2, respectively.