通过实验分析了静电诱导硅可控整流器(S、I、硅可控整流器)的关断过程。发现关断过程可区分为低电流范围的指数过程和大电流范围的线性过程两种情况。指数过程的关断时间,主要决定于载流子复合的快慢,随阳极电流的增大而减短;线性过程的关断时间,主要决定于?极抽取载流子的能力,随阳极电流的增大而增长。 The shutdown process of the SCR-controlled silicon rectifier (S, I, silicon controlled rectifier) ​​is analyzed experimentally. It is found that the shutdown process can be divided into two cases: the exponential process in the low current range and the linear process in the high current range. The turn-off time of the exponential process depends mainly on the speed of carrier recombination and decreases as the anode current increases. The off-time of the linear process depends mainly on the ability of the anode to extract carriers, Increase and grow.