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美国Technology and Devices International(TDI)公司采用氢化物汽相外延(HVPE)开发出同时生产12片2英寸直径GaN/蓝宝石晶片或GaN/SiC晶片的方法。这项工艺方法经过美国导弹防御署小型企业改进研究计划的资助得到改进,以降低GaN器件的成本,用于先进雷达和功率系统。TDI称,他们
Technology and Devices International (TDI) of the United States used hydride vapor phase epitaxy (HVPE) to develop a process for the simultaneous production of 12 2-inch diameter GaN / sapphire wafers or GaN / SiC wafers. This process has been enhanced with funding from the U.S. Agency for Missile Defense’s Small Business Improvement Research Program to reduce the cost of GaN devices for advanced radar and power systems. TDI said they