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本文主要介绍了硅中硼离子注入校准样品的制备与研究。分别用三台SIMS仪器对样品进行了深度剖析与比对,并对用作校准目的的样品主要参数进行了定值。
This paper mainly introduces the preparation and research of boron ion implantation calibration sample in silicon. The samples were deeply analyzed and aligned with three SIMS instruments, respectively, and the main parameters of the samples used for calibration were set.