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本文描述了一种确定砷化镓金属-半导体场效应晶体管(GaAsMESFET)有源沟道基本性质的新方法。有效栅长、沟道厚度以及载流子浓度是根据器件直流参数确定的。给出了测量直流参数的一种正确方法。用不同样品制作的器件证明此方法有效。指出用直流参数也可以很好地预言器件的微波参数,如最大输出功率、最小噪声系数。根据器件的材料参数和几何结构建立起来的简单解析式,求得的本征直流参数和非本征直流参数与测量值相符。这些公式能够作为设计器件的基础。
This article describes a new method for determining the basic properties of an active channel in a gallium arsenide metal-semiconductor field-effect transistor (GaAsMESFET). The effective gate length, channel thickness and carrier concentration are determined by the device DC parameters. A correct method of measuring DC parameters is given. Devices made with different samples proved that this method is effective. Pointed out that the DC parameters can also predict the microwave device parameters, such as the maximum output power, the minimum noise figure. According to the simple analytic formula established by the material parameters and geometric structure of the device, the intrinsic DC parameters and extrinsic DC parameters obtained are in accordance with the measured values. These formulas serve as the basis for designing the device.