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采用分子束外延技术在GaAs(110)衬底上制备了一系列生长温度和As2/Ga束流等效压强比不同的样品,通过室温光致发光谱、高分辨X射线衍射仪和低温光致发光谱对这些样品进行了分析,找到了在GaAs(110)衬底上生长高质量高Al组分的Al0.4Ga0.6As生长条件.
A series of samples with different growth pressure and As 2 / Ga beam equivalent pressure ratio were prepared by molecular beam epitaxy on GaAs (110) substrate. The samples were characterized by room temperature photoluminescence spectroscopy, high resolution XRD and low temperature photoluminescence Emission spectra of these samples were analyzed to find Al0.4Ga0.6As growth conditions for the growth of high quality and high Al compositions on GaAs (110) substrates.