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半导体器件上铜层化学机械抛光(CMP)的第一道工序一般需要使用一块硬抛光垫,在磨去阻挡层的工序中要用到软垫。在磨去阻挡层和电介质材料时,要把各家供应商的各种抛光液与这些抛光垫配合在一起使用。用于把铜大量地磨掉的硬垫,抛光后的平面度很好,而在磨掉阻挡层工序中使用的软垫,它所产生的缺陷很少,这是由于它本身的结构而且由于它很软的缘故。随着半导体器件变得越来越小、线条宽度缩小,半导体技术更不允许金属出现损失,也更不允许化学机械抛光出现缺陷。这些参数最终会影响器件的性能和成品率。因此市场需要一种化学机械抛光垫,它能够提高铜阻挡层的平面度,具备软垫进行抛光时缺陷少的优点。介绍一种新的化学机械抛光垫技术,它使用了专门设计的聚合物材料,从而满足产业界的要求。
The first process of copper layer chemical mechanical polishing (CMP) on a semiconductor device typically requires the use of a hard polishing pad, which is used in the process of abrading the barrier layer. When rubbing off barrier and dielectric materials, use a variety of polishing solutions from various suppliers with these polishing pads. The hard pad used to extensively remove the copper has a good flatness after polishing and the pad used in the process of abrading the barrier has very few defects due to its own structure and due to It’s so soft. As semiconductor devices become smaller and smaller, the width of the lines shrinks, the semiconductor technology does not allow the loss of the metal, and the chemical mechanical polishing does not allow the defect. These parameters ultimately affect device performance and yield. Therefore, there is a need for a chemical mechanical polishing pad that increases the flatness of the copper barrier layer and has the advantage of providing less cushioning when polishing. Introducing a new chemical mechanical polishing pad technology that uses specially engineered polymer materials to meet industry requirements.