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最近随着集成电路技术,特别是金属-氧化物-半导体大规模集成电路技术的发展,根据对器件的高可靠性、高集成度、高功能、高产量的要求,对作为器件衬底材料的半导体硅单晶和晶片的要求也日益严格了。从硅单晶材料供应角度来看,须满足以下要求: 1. 大直径化直径40mm普及化,并趋向于直径50～60mm。 2. 均匀性电阻率参数范围波动小,径向阻值范围小。
Recently, with the development of integrated circuit technology, especially the metal-oxide semiconductor semiconductors, based on the requirements for high reliability, high integration, high functionality and high yield of the device, Semiconductor silicon single crystal and wafer requirements are also increasingly stringent. From the perspective of the supply of silicon single crystal material, the following requirements must be met: 1. Large diameter diameter 40mm popularity, and tend to diameter 50 ~ 60mm. 2. Uniformity Resistivity parameter range of small fluctuations, radial resistance range.