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在InP衬底上采用感应耦合等离子体刻蚀技术制备了高性能的AlAs/In0.53Ga0.47As/InAs共振隧穿二极管.正向偏压下PVCR=7.57,Jp=39.08kA/cm2;反向偏压下PVCR=7.93,Jp=34.56kA/cm2.在未去除测试电极和引线等寄生参数影响下,面积为5μm×5μm的RTD的阻性截止频率为18.75GHz.最后对非对称的I- V特性进行了分析讨论.
A high performance AlAs / In0.53Ga0.47As / InAs resonant tunneling diode was fabricated on an InP substrate by inductively coupled plasma etching (PVCR = 7.57, Jp = 39.08kA / cm2) PVR = 7.93, Jp = 34.56kA / cm2 under the bias voltage.The resistive cut-off frequency of the RTD with the area of 5μm × 5μm was 18.75GHz under the influence of parasitic parameters such as the test electrode and the lead.Finally, the asymmetric I- V characteristics of the analysis and discussion.