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半导体中各种不均匀性对迁移率的影响在理论上已有不同深度的认识。尤里斯克处理过导体中不导电腔的影响,克劳福特讨论过半导体中由快中子辐照引进的畸变区的作用;白梯查明了电导率梯度及不连续性的影响;魏斯贝格研究过局部不均匀区周围的空间电荷区对载流子的散射。
The effect of various inhomogeneities in semiconductor on mobility has been theoretically different in depth. Joulesk deals with the effect of non-conducting cavities in conductors, and Crawford discusses the role of distorted regions introduced by fast neutron irradiation in semiconductors; the white ladder identifies the effects of conductivity gradients and discontinuities; and Weiss Berg studied the scattering of carriers by the space charge region around the partially inhomogeneous region.