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建立了一个预测硅全耗尽背照式光电二极管响应率的解析模型。分析了所加反偏压与光谱响应之间的关系,解出了硅全耗尽背照式光电二极管的响应率和器件各参数之间的关系,并根据选定参数值计算出了给定外加偏压下400～1100nm范围的光谱响应曲线,预测探测器光谱响应峰值在1μm,峰值响应率达到0.72A/W。实测结果表明:器件峰值响应与预测一致,反偏压对响应率的影响与预测相同,即响应率随着反偏压的升高而增大。并且在各种反偏压下的光谱响应曲线形状与预测基本吻合,证明了建立的模型可以正确地预测器件性能。
An analytical model for predicting the responsivity of a fully depleted back-illuminated photodiode is established. The relationship between the applied bias voltage and the spectral response was analyzed, and the relationship between the responsivity of silicon fully depleted back-illuminated photodiode and the parameters of the device was solved and the given Under the bias voltage range of 400 ~ 1100nm, the spectral response curve of the detector is predicted to be 1μm and the peak response rate reaches 0.72A / W. The experimental results show that the peak response of the device is consistent with the prediction. The effect of reverse bias on the response rate is the same as the prediction, that is, the response rate increases with the reverse bias. And the shape of the spectral response curve under various reverse bias basically agrees with the prediction, which proves that the established model can correctly predict the device performance.