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本发明是关于将氧化铅和硒化物或碲化物等至少一种金属硫化物做积层的光导电薄膜的制造方法的改良。 由于氧化铅光导电膜具有高灵敏度、暗电流非常小并且光反应速度极快等优点,所以对摄像管很有用处。但由于氧化铅能级结构产生的2.0ev的禁带宽度,对640mμ以上的光波不
The present invention relates to an improvement of a method of manufacturing a photoconductive thin film in which at least one metal sulfide such as lead oxide, selenide or telluride is laminated. Because lead oxide photoconductive film with high sensitivity, dark current is very small and very fast response speed, it is useful for the camera tube. However, due to the level structure of lead oxide generated 2.0ev band gap, for more than 640mμ light wave