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在半导体器件的发展中,最初所用的材料主要是元素半导体锗。在1960年后,元素半导体硅的材料和器件工艺迅速发展起来,很快在半导体器件研制中占主要地位。目前也还在继续发展。但是,十多年来,化合物半导体的发展是很值得重视的。特别是Ⅲ—Ⅴ族化合物半导体材料中的砷化镓已在器件研制中取得了一定成果。砷化镓由于电子迁移率高、禁带宽等优点适于制造高频、大功率和高温器件。在一些器件中采用砷化镓材料后,获得了比同类锗、硅器件更高的性能。而且由于砷化镓特殊的能带结构,又发展了
In the development of semiconductor devices, the initial material used is mainly the elemental semiconductor germanium. After 1960, the elemental silicon material and device technology developed rapidly, and soon dominated the development of semiconductor devices. It is still continuing to develop. However, for more than a decade, the development of compound semiconductors is worthy of attention. In particular, III-V compound semiconductor gallium arsenide has made some achievements in device development. Gallium arsenide is suitable for manufacturing high-frequency, high-power and high-temperature devices due to its high electron mobility and forbidden bandwidth. In some devices using gallium arsenide materials, get higher than similar germanium, silicon devices performance. And because of gallium arsenide special band structure, but also developed