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在过去的几年中,红外成象技术成熟得很快,该技术所取得的进步已在许多方面得到了反映。凝视列阵规格尺寸的改进,已与动态随机存取存储器尺寸的增加取得同步。芯片接口正在不断简化,在有些情况下,输出格式已能直接与RS 170视频标准兼容。同时,诸如象元选择和电子变焦之类的新的芯片功能正在被融合到焦平面上。5 μm中波凝视敏感器的工作温度已提高到180K,再过几年,便将可以买到非致冷型的8～12μm长波敏感器。基于Ⅲ-Ⅴ族半导体的新型量子阱材料工艺发展得很快,它所提供的成象演示结果已经不亚于用PtSi、HgCdTe和InSb所获得的结果。现在,采用PtSi和InSb的商业红外成象摄象机已到处可以买到。为了更有效地利用宝贵的望远镜时间,InSb、HgCdTe 以及非本征硅技术已经从满足军事应用的需求转向支持天文学需要方面。人们对关键的可生产性合同的支持,已经使敏感嚣成本得到了大幅度下降。
In the past few years, infrared imaging technology has matured very quickly, and advances in this technology have been reflected in many ways. The improvement in the size of the gaze array has been synchronized with the increase in the size of the dynamic random access memory. The chip interface is constantly being simplified, and in some cases the output format is already directly compatible with the RS 170 video standard. At the same time, new chip functions such as pixel selection and electronic zoom are being fused to the focal plane. The operating temperature of the 5 μm mid-wavelength gaze sensor has been raised to 180K, and in a few years you will be able to buy a non-cooled 8-12μm long wave sensor. The new quantum well material technology based on III-V semiconductors has developed rapidly and has provided imaging demonstrations no smaller than those obtained with PtSi, HgCdTe and InSb. Commercial infrared imaging cameras using PtSi and InSb are now available everywhere. In order to make more efficient use of valuable telescope time, InSb, HgCdTe, and extrinsic silicon technologies have shifted from meeting the needs of military applications to supporting astronomical needs. People’s support for key productiv- ity contracts has sharply reduced the cost of obfuscation.