本文描述了一个在晶圆区产生低温等离子体的新型等离子源(RLSATM)。低Te特性是因将晶圆区等离子与功率淀积区分离而产生的。在刻蚀高深宽比结构中,该等离子源显示提高了刻蚀性能,减少了微负载效应和ARDE效应,有助于缓解在先进finFET FEOL刻蚀应用中挑战。 This article describes a novel plasma source (RLSATM) that generates low temperature plasma in the wafer area. The low Te characteristic results from the separation of the wafer plasma from the power deposition area. In etching high aspect ratio structures, the plasma source shows improved etch performance, reduced micro-load and ARDE effects, and helps to alleviate challenges in advanced finFET FEOL etch applications.