We have experimentally studied the surface modifications of Y-Ba-Cu-O (YBCO) thin films using CF4plasma. The intensity of the plasma fluorination was controlled by changing the liasing voltage and the time of the plasma treatment. Microstructural analyses reveal that the oxygen content of the YBCO thin films was changed. Transport measurements of sufficient fluorinated YBCO films imply that the films changed totally into an oxygen-deficient semi-conducting state. From these experimental results, we believe that plasma fluorination is quite a useful method to form controllable a thin barrier layer in fabricating interface engineered junctions and to form a stable narrow weak-link region in fabricating planar superconductor-normal-superconductor junctions.