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介绍了GaAs MMIC(GaAs microwave monolithic integrated circuit)工艺运用监测技术控制工艺过程,实时掌握工艺状况,保证产品的一致性、可重复性和可靠性。针对薄层电阻和接触电阻的阻值以及器件的栅阻和栅长等工艺过程中关键的参数,分别用范德堡结构、开尔文结构和十字桥结构进行监测。采用范德堡结构测得薄层电阻Rs=(π/ln 2)V14/I23,开尔文结构得到接触电阻Rc=V13/I24,十字桥结构可以了解栅阻和栅长。然后通过运用统计过程控制技术对数据进行分析,可以有效改进工艺,提高产品质量。
The technology of GaAs MMIC (GaAs microwave monolithic integrated circuit) is introduced to control the process by using the monitor technology to grasp the process status in real time and ensure the consistency, repeatability and reliability of the product. Resistance against the sheet resistance and contact resistance as well as the gate resistance and gate length of the device and other key parameters in the process, respectively, with the Vanderbilt structure, Kelvin structure and cross bridge structure monitoring. The sheet resistance Rs = (π / ln 2) V14 / I23 is measured with a Vanderbilt structure, and the contact resistance Rc = V13 / I24 is obtained with a Kelvin structure. Then through the use of statistical process control technology to analyze the data, you can effectively improve the process and improve product quality.