论文部分内容阅读
We have successfully grown a ZnSe single crystal film on GaAs(100) by hoi wall epitaxy. We confirmed that the epilayer is ZnSe single crystal from the analysis of scanning eletron microscopy and X-ray diffraction. The strong near-band-edge emission is found in the PL spectra and the Es-band related to free exiton is also very strong. They are much stronger than the deep center band emission, which shows the perfection of the epilayer. We have also studied the ZnSe/GaAs interface by AES and XPS.
We have successfully grown a ZnSe single crystal film on GaAs (100) by hoi wall epitaxy. We confirmed that the epilayer is ZnSe single crystal from the analysis of scanning eletron microscopy and X-ray diffraction. The strong near-band-edge emission is found in the PL spectra and the Es-band related to free exiton is also very strong. They are much stronger than the deep center band emission, which shows the perfection of the epilayer. We have also studied the ZnSe / GaAs interface by AES and XPS.