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使用半导体器件数值分析工具 DESSISE- ISE,对侧向的 P+ P- N+栅控二极管的正向 R- G电流对 SOI体陷阱特征和硅膜结构的依赖性进行了详尽的研究 .通过系统地改变硅膜体陷阱的密度和能级分布 ,得出了相应的 P+ P-N+ 栅控二极管的正向 R- G电流的变化 .同时 ,表征硅膜结构的参数如沟道掺杂和硅膜厚度的变化也使器件从部分耗尽向全耗尽方向转化 ,分析了这种转化对 R- G电流大小和分布的影响
Using the DESSISE-ISE, a numerical tool for semiconductor device analysis, the dependence of the trapped SOI body traps and the dependence of the silicon film structure on the forward R-G current of a lateral P + P- N + gated diode has been studied in detail. By systematically varying The density and energy level distribution of the silicon film body traps, the corresponding R + G current of the P + P-N + gated diode is obtained, and the parameters of the silicon film structure such as the channel doping and the thickness of the silicon film Also transformed the device from partially depleted to fully depleted, and analyzed the effect of this conversion on the magnitude and distribution of R-G current