随着多晶GaN材料发光研究的不断深入 ,大面积、价格低廉的多晶GaN基光电器件的研制已成为工业生产中一个重要的研究领域。石英玻璃以其自身特有的优势 ,成为生长多晶GaN材料的较为理想的衬底。本文采用一种新的金属镓层氮化技术 ,使用无定形石英作衬底 ,在常压下制备出多晶GaN。经分析测试表明 ,生长出的多晶GaN为六方结构且质量较好 ,并观察到针状的表面结构 With the continuous research of polycrystalline GaN material luminescence, the development of large area and low cost polycrystalline GaN based optoelectronic devices has become an important research field in industrial production. Quartz glass with its own unique advantages, as the growth of polycrystalline GaN material is the ideal substrate. In this paper, a new metal gallium nitride layer technology, the use of amorphous silica as a substrate, prepared at atmospheric pressure polycrystalline GaN. The analysis and testing showed that the grown polycrystalline GaN was hexagonal with good quality and acicular surface structure was observed