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报道了利用高真空 MOCVD外延生长 γ氧化铝的技术和利用 SOS CMOS的成熟工艺制作双异质外延 Si/ γ-Al2 O3/ Si单晶薄膜以及用其研制 Si/ γ- Al2 O3/ Si CMOS场效应晶体管、Si/ γ- Al2 O3/ Si CMOS集成电路的初步结果
The technology of epitaxially growing γ-alumina by high-vacuum MOCVD and the fabrication of double heteroepitaxial Si / γ-Al2 O3 / Si single crystal thin films by using SOS CMOS technology have been reported and the Si / γ-Al2 O3 / Si CMOS field Effect Transistors, Si / γ-Al2 O3 / Si CMOS Integrated Circuits Preliminary Results