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利用直流磁控溅射技术制备了三元硼碳氮(B-C-N)薄膜,通过改变靶功率、基体偏压、沉积温度和励磁线圈电流,在相同沉积时间内得到不同厚度的薄膜。采用纳米压入仪分析了沉积参数改变对B-C-N薄膜沉积速率的影响规律。结果表明,在低靶功率和高励磁电流的条件下沉积的薄膜,随着靶功率和励磁电流的增加薄膜沉积速率呈线性增长;薄膜的沉积速率随基体偏压的增加呈抛物线状下降;薄膜的沉积速率受基体是否升温影响很大,而受基体所加温度大小影响较小。
The ternary boron-carbonitride (B-C-N) thin films were prepared by DC magnetron sputtering. Different thickness thin films were obtained in the same deposition time by changing the target power, substrate bias voltage, deposition temperature and field coil current. The effects of deposition parameters on the deposition rate of B-C-N thin films were analyzed by using nanoindenter. The results show that the film deposition rate increases linearly with the increase of target power and excitation current, and the deposition rate of film decreases parabolically with the increase of substrate bias. Of the deposition rate by the substrate temperature is greatly affected, but by the substrate temperature effect of smaller size.