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采用直流磁控溅射法在玻璃基底上制备c轴取向的ZnO薄膜,以此作为晶种层,在硝酸锌(Zn(NO3)2.6H2O)与六亚甲基四胺(C6H12N4)等摩尔浓度反应溶液中添加不同摩尔分数的硝酸铝(Al(NO3)3.9H2O),用化学水浴法合成Al掺杂ZnO(ZAO)纳米棒阵列。X射线衍射结果表明,少量的Al掺杂并不影响ZnO晶体结构,ZAO具有六方纤锌矿型结构。利用扫描电子显微镜、荧光分光光度计、四探针测试仪研究了溶液中Zn源的初始浓度和Al的掺杂量对ZAO纳米形貌、结构和光电性能的影响。结果表明,Al掺杂提高了ZAO薄膜的导电性,当前驱体溶液中Zn源的初始浓度为0.03 mol/L时,制备的掺2%Al的ZAO薄膜沿c轴生长且结晶性好,具有电阻率小和最好的光致发光性能。
The c-axis oriented ZnO thin film was prepared on a glass substrate by direct current magnetron sputtering as a seed layer with a molar ratio of zinc nitrate (Zn (NO3) 2.6H2O) to hexamethylenetetramine (C6H12N4) Al (NO3) 3.9H2O with different molar fractions was added to the reaction solution, and Al-doped ZnO (ZAO) nanorod arrays were synthesized by chemical bath method. X-ray diffraction results show that a small amount of Al doping does not affect the crystal structure of ZnO, and ZAO has a hexagonal wurtzite structure. The effects of the initial concentration of Zn source and the doping amount of Al on the morphology, structure and photoelectric properties of ZAO were investigated by scanning electron microscopy, fluorescence spectrophotometer and four-probe tester. The results show that Al doping improves the electrical conductivity of ZAO thin films. When the initial concentration of Zn source in the precursor solution is 0.03 mol / L, the prepared ZAO thin films with 2% Al are grown along the c axis and have good crystallinity. Low resistivity and best photoluminescence properties.