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采用等离子体化学气相沉积技术制备氢化非晶硅薄膜,经过不同温度下的热退火处理,使薄膜由非晶结构向晶化结构转变,得到含有纳米晶粒的晶化硅薄膜.在晶化过程中,采用Raman技术对样品的结构进行表征.通过变温电导率的测试,对薄膜的电学输运性质进行了分析.研究结果表明:退火温度为700℃时,样品中开始有纳米晶形成,随着退火温度的增加,样品的晶化比增大,在1000℃时,薄膜的晶化比达到90%以上.在700℃退火时,薄膜中晶化成分较低,载流子的传输特性主要受到与硅悬挂键有关的缺陷态影响,表现为带尾定域态的跳跃电导.随着晶化度的提高,在1000℃时薄膜的电输运过程主要为晶化硅的扩展态电导,同时量子隧穿输运对薄膜的电输运过程也有一定的影响.
The hydrogenated amorphous silicon thin film is prepared by a plasma chemical vapor deposition technique and is subjected to thermal annealing at different temperatures so that the thin film is transformed from an amorphous structure to a crystalline structure to obtain a crystallized silicon thin film containing nano- , The Raman technique was used to characterize the structure of the samples.The electrical conductivity of the films was analyzed by means of temperature-dependent conductivity test.The results show that the nanocrystals begin to form at the annealing temperature of 700 ℃, With the increase of annealing temperature, the crystallization ratio increases, and the crystallization ratio of the film reaches more than 90% at 1000 ℃. When annealed at 700 ℃, the crystallization components in the film are low and the carrier transport characteristics are mainly Which is affected by the defect state associated with the dangling bonds of silicon, which is characterized by a hopping conductance with a tail-localized domain state.With the increase of the degree of crystallization, the electric transport process of the film at 1000 ℃ is mainly the extended conductance of the crystallized silicon, At the same time, quantum tunneling transport also has a certain impact on the electrical transport process of the film.