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用超高压电镜观察和分析了平面、剖面及磨角的Ga_xIn_(1-x)P/GaAs样品,界面附近位错线的柏氏矢量大多是 b=1/2<100>,平面样品中位错线弯曲且相互交织形成网络,剖面样品中位错线较直且是分立的,不形成网络.认为衬底表面及母液中的夹杂物是外延层中位错的主要来源.另外,在磨角样品中看到衬底位错通过弯曲和表面产生机制向外延层扩展.
The Ga_xIn_ (1-x) P / GaAs samples with planar, cross-section and polished angles were observed and analyzed by EHV electron microscopy. Most of the Burgers vectors of dislocation lines near the interface were b = 1/2 <100> The lines are bent and interweaved to form a network, and the dislocation lines in the cross-section samples are relatively straight and discrete and do not form a network.It is considered that the inclusions in the substrate surface and mother liquor are the main sources of dislocations in the epitaxial layer.In addition, Substrate dislocations were seen in the sample to propagate to the epitaxial layer through bending and surface generation mechanisms.