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研究了应用于日盲探测器的高Al组分Si掺杂n型Al0.6Ga0.4N与两层金属层Ti(20nm)/Al(100nm)之间的欧姆接触.在制作金属电极前用煮沸王水对样片进行表面预处理,金属制作后再在N2氛围中做快速热退火处理.使用高精度XRD测试样品表面特性,并对不同温度下的情况进行比较.样品的比接触电阻率是用环形传输线模型通过I-V测试得到.670℃下90s退火得到最优ρc为3.42×10-4Ω·cm2.将该处理方法应用到实际的背照式AlGaN p-i-n日盲探测器中,探测器的光谱响应度和反向特性等参数得到很大的优化.
The ohmic contact between Si-doped n-type Al0.6Ga0.4N and two Ti (20nm) / Al (100nm) Al layers, which are high-Al components, is studied in a solar blind detector. Aqua regia sample pretreatment, metal fabrication and then in the N2 atmosphere to do rapid thermal annealing treatment using high-precision XRD sample surface properties and comparison of different temperatures. Specific resistivity of the sample is used with The ring transmission line model was obtained by IV test. The optimal ρc was obtained at 90 ℃ for 90 s at 6 ℃, which was 3.42 × 10-4Ω · cm2. This method was applied to the actual back-illuminated AlGaN pin-blind detector. The spectral response of the detector Parameters such as degree and reverse are greatly optimized.