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由于它允许生产大量的大面积形状均勻的磷化镓,Czochralski液封法在Gap的生产工艺山是最先进的。要成功地生长单晶锭需要保持生长界面的可见度。这是在使用之前通过烘烤B_2O_3液封剂来完成,在晶体生长前将紧密包装的多晶Gap装入坩埚底部,并置于加热器的中心,同时在晶体生长过程中要保持B_2O_3相当的温度。所得的锭具有均匀的高的霍尔迁移率,一般的至少高于所报导过的用其他方法所生长的Gap。锭的中心区域具有位错密度≤1×10~5cm~(-2)。对于S,Se,Te和Zn的有效分配系数被发现,分别为0.23±90.08,0.16±0.05,0.012±0.003和0;096±0.05。
The Czochralski liquid seal method is the most advanced in Gap’s production process because of its ability to produce large quantities of gallium phosphide in a large area. The successful growth of single crystal ingots requires maintaining the visibility of the growth interface. This is done by baking the B_2O_3 sealant prior to use, packing the tightly packed polygranular Gap into the bottom of the crucible prior to crystal growth, and placing it in the center of the heater while keeping the B_2O_3 equivalent during the crystal growth temperature. The resulting ingot has a uniform high Hall mobility, typically at least above that reported for Gap grown by other methods. The center of the ingot has a dislocation density of ≤1 × 10 ~ 5cm ~ (-2). Effective partition coefficients for S, Se, Te and Zn were found to be 0.23 ± 90.08, 0.16 ± 0.05, 0.012 ± 0.003 and 0, respectively; 096 ± 0.05.