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在MOS器件制造的初期,发现经加温和电场的作用后,器件的阀值电压会发生漂移,实验证明这是栅氧化层中(?)污了钠离子。正是磷硅玻璃膜的出现,才使MOS器件及集成电路得以迅速发展。这是在热生长的栅氧化膜SiO_2上再生长一层含有P_2O_5的SiO_2薄膜(通常简称为PSG膜),这层PSG膜具有提取,固定和阻挡钠离子的作用,起了钝化和保护作用,因而生长PSG膜是MOS集成电路,铝栅CMOS集成电路制造中广泛来
In the early stage of MOS device manufacturing, it was found that the threshold voltage of the device drifted after being warmed and the electric field was applied. It was experimentally proved that the gate oxide ()) fouled sodium ions in the gate oxide layer. It is the emergence of phosphosilicate glass film, MOS devices and integrated circuits to rapid development. This is the growth of the gate oxide film grown on a layer of SiO_2 P_2O_5 containing SiO_2 film (usually referred to as PSG film), this layer of PSG film has the role of extraction, fixation and blocking sodium ion, played a passivation and protection , So the growth of PSG film is MOS integrated circuits, aluminum gate CMOS integrated circuit manufacturing widely