论文部分内容阅读
目前,用砷化镓(GaAs)红外发光二极管和硅光敏三极管(或二极管)构成的红外光传感器应用范围越来越大。但是由于GaAs红外发光二极管和硅光敏三极管都存在退化现象,而且对温度较敏感,受环境温度影响大,因而在测量精度、稳定性和使用范围等方面受到一定限制,不能满足要求。为此,研究其退化和温度影响的补偿就显得十分必要而有意义。
Currently, the use of gallium arsenide (GaAs) infrared light-emitting diodes and silicon phototransistors (or diodes) constitute the infrared light sensor applications are more and more. However, due to degradation of GaAs infrared light-emitting diodes and silicon phototransistors, they are sensitive to temperature and greatly affected by the ambient temperature, and thus are limited in terms of measurement accuracy, stability and application range, and can not meet the requirements. Therefore, it is necessary and meaningful to study the compensation of its degradation and temperature effects.