论文部分内容阅读
国外研制成一种用砷化镓材料的超高频场效应管.这种管子(型号为HFET-2201)的截止频率达18千兆赫,典型噪声系数在频率为14千兆赫时仅3.1分贝,而增益为8分贝.据称,这是一种低噪声、高增益
A gallium arsenide-based UHF FET was developed abroad with a cutoff frequency of 18 GHz and a typical noise figure of 3.1 dB at 14 GHz The gain is 8 dB, which is said to be a low noise, high gain