论文部分内容阅读
本文报道了栅长为0.15μm的双异质结PHEMT及其功率和噪声性能的目前最高水平。在35GHz,60GHz和94GHz下,功率附加效率分别为51％、41％和23％。在60GHz和94GHz下的输出功率为139mW和57mW。在18GHz和60GHz下测得的最小噪声系数为0.55dB和1.8dB,这是已报道的钝化晶体管的最低值。基于PHEMT已显示出的性能和继续迅速的改进,它将作为最优先选用的晶体管在毫米波范围内得到广泛应用。它既可以作为分立器件用于高性能的混合电路放大器中,也可以集成到砷化镓衬底的MMIC中。
This paper reports the double heterojunction PHEMT with a gate length of 0.15 μm and its current highest level of power and noise performance. At 35GHz, 60GHz and 94GHz, the additional power efficiency of 51%, respectively, 41% and 23%. The output power at 60GHz and 94GHz is 139mW and 57mW. The minimum noise figure measured at 18GHz and 60GHz is 0.55dB and 1.8dB, which is the lowest reported passivation transistor. Based on the performance that PHEMT has shown and its continued rapid improvement, it is expected to be the most preferred transistor for use in millimeter-wave applications. It can be used as a discrete device in high-performance mixed-circuit amplifiers or integrated into the gallium arsenide substrate MMIC.