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报道了HgCdTe长波离子注入n+-on-p型光电二极管列阵低能氢等离子体修饰的研究成果.基于采用分子束外延(MBE)技术生长的HgCdTe/CdTe薄膜材料,通过注入窗口的光刻与选择性腐蚀、注入阻挡层的生长、形成光电二极管的B+注入、光电二极管列阵的低能氢等离子体修饰、金属化和铟柱列阵的制备等工艺,得到了氢等离子体修饰的n+-on-p型HgCdTe长波光电二极管列阵.从温度为78 K的电流与电压(I-V)和动态阻抗与电压(R-V)特性曲线中,发现经过低能氢等离子体修饰的HgCdTe红外长波光电二极管列阵动态阻抗极大值比未经过修饰处理的提高了1～2倍,并在反向偏压大于动态阻抗极大值所处的偏压时动态阻抗得到更为明显的提升.这表明低能氢等离子体修饰可以抑制HgCdTe光电二极管列阵暗电流中的带带直接隧穿电流Ibbt和缺陷辅助隧穿电流Itat,从而能提高长波红外焦平面探测器工作的动态范围和探测性能的均匀性.
The research results of low energy hydrogen plasma modification of HgCdTe long-wavelength ion implantation n + -on-p type photodiode array are reported. Based on the HgCdTe / CdTe thin film material grown by molecular beam epitaxy (MBE) Implantation process, the growth of implantation barrier, B + implantation of photodiode, low-energy hydrogen plasma modification of photodiode array, metallization and preparation of indium column array were studied. The hydrogen plasma modified n + -on- p-type HgCdTe long wavelength photodiode array.From the current and voltage (IV) and the dynamic impedance and voltage (RV) curves at 78 K, we found that the HgCdTe infrared long wavelength photodiode array modified by low energy hydrogen plasma has a dynamic impedance The maximum value is 1 to 2 times higher than that without modification, and the dynamic impedance is more obviously enhanced when the reverse bias voltage is larger than the maximum value of the dynamic impedance. This shows that the low-energy hydrogen plasma modification Can suppress the direct band-pass tunneling current Ibbt and the defect auxiliary tunneling tunneling current Itat in the dark current of the HgCdTe photodiode array, so as to improve the workability of the long-wave infrared focal plane detector Dynamic range and detection performance uniformity.