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介绍了多晶硅压力传感器的温度特性．重点研究了ＬＰＣＶＤ·Ｐｏｌｙ－Ｓｉ膜的掺杂浓度对传感器温度特性的影响．通过理论分析和实验研究，找到了实现传感器温度自补偿的最佳掺杂浓度值．获得了工作温度高、温度特性好的压力传感器．实验结果与理论分析相符．
The temperature characteristics of polysilicon pressure sensor are introduced. The influence of the doping concentration of LPCVD · Poly-Si film on the temperature characteristics of the sensor is emphatically studied. Through theoretical analysis and experimental research, we find the optimal doping concentration for self-compensation of sensor temperature. Obtained a high temperature, good temperature characteristics of the pressure sensor. The experimental results are in line with the theoretical analysis.