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在单台面二极管晶圆的制备中,刀具划片存在速度慢、芯片崩边率高等问题。激光划片为非接触加工,成品率高。根据晶体硅的性质,对激光划片方向进行了讨论,分析了红外激光对硅片的作用机理。根据一维热传导方程导出的近似解析解,计算了功率和扫描速度影响下的去除深度。使用1064 nm脉冲光纤激光器完成了7.62 cm晶圆的激光划片,获得了崩边率小于1%,电性能合格率达到100%的样品。研究表明,去除深度影响芯片的崩边率,离焦量影响芯片的电性能。控制去除深度和离焦量进行划片会获得很高的良品率。
In the preparation of single-sided diode wafers, the tool scribing has the problems of slow speed and high chipping rate. Laser scribing for non-contact processing, high yield. According to the nature of crystalline silicon, the direction of laser scribing is discussed, and the mechanism of action of infrared laser on silicon wafer is analyzed. According to the approximate analytic solution derived from the one-dimensional heat conduction equation, the removal depth under the influence of power and scanning speed is calculated. A laser dicing of 7.62 cm wafers was completed with a 1064 nm pulsed fiber laser, resulting in samples with a flammability of less than 1% and electrical performance of 100%. Studies have shown that the depth of removal affects the chipping edge of the chip and the amount of defocus affects the electrical properties of the chip. Control to remove the depth and defocus amount for scribing will get a high yield.